APTGF150X60TE3G APTGF150X60TE3G ? rev 2 april, 2006 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 225 i c continuous collector current t c = 80c 150 i cm pulsed collector current t c = 25c 450 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 700 w rbsoa reverse bias safe operating area t j = 125c 400a@480v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. t1 r t2 q5 11 12 q6 9 10 v 8 q2 5 6 u q1 w 1 p+ 2 n- 4 3 q3 q4 7 15 16 17 13 14 8 7911 10 18 19 56 34 1 21 20 12 2 v ces = 600v i c = 150a @ tc = 80c applicatio n ? ac motor control features ? non punch through (npt) fast igbt ? - low voltage drop - low tail current - switching freque nc y up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? low profile ? rohs compliant 3 phase bridge n p t igbt power module
APTGF150X60TE3G APTGF150X60TE3G ? rev 2 april, 2006 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 500 a t j = 25c 1.7 2.0 2.5 v ce(sat) collector emitter saturation voltage v ge =15v i c = 200a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 4 ma 4.5 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 9000 c res reverse transfer capacitance v ge = 0v, v ce = 25v f = 1mhz 800 pf t d(on) turn-on delay time 163 t r rise time 43 t d(off) turn-off delay time 253 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 200a r g = 1.5 ? 33 ns t d(on) turn-on delay time 180 t r rise time 49 t d(off) turn-off delay time 285 t f fall time inductive switching (125c) v ge = 15v v bus = 300v i c = 200a r g = 1.5 ? 41 ns e on turn on energy t j = 125c 3.7 e off turn off energy v ge = 15v v bus = 300v i c = 200a r g = 1.5 ? t j = 125c 6.3 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 150 a t j = 25c 1.25 1.6 v f diode forward voltage i f = 150a v ge = 0v t j = 125c 1.2 v e r reverse recovery energy t j = 125c 4 mj t j = 25c 150 t rr reverse recovery time t j = 125c 250 ns t j = 25c 11 q rr reverse recovery charge i f = 150a v r = 300v di/dt =5600a/s t j = 125c 17 c
APTGF150X60TE3G APTGF150X60TE3G ? rev 2 april, 2006 apt website ? http:/ / www.advancedpower.com 3 - 5 temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 5 k ? b 25/50 t 25 = 298.16 k 3375 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 50 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.18 r thjc junction to case thermal resistance diode 0.44 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c torque mounting torque to heatsink m5 3 4.5 n.m wt package weight 300 g e3 package outline (dimensions in mm) pin 1 pin 2 1 a ll dim ens ion s mar ked " * " a re t ol ere nc ed as : t: thermistor temperature r t : thermistor value at t
APTGF150X60TE3G APTGF150X60TE3G ? rev 2 april, 2006 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 350 400 00.511.522.533.5 v ce (v) i c (a) output characteristics v ge =15v v ge =12v v ge =20v v ge =9v 0 50 100 150 200 250 300 350 400 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =25c t j =125c 0 50 100 150 200 250 300 350 400 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff er er 0 3 6 9 12 0 100 200 300 400 i c (a) e (mj) v ce = 300v v ge = 15v r g = 1.5 ? t j = 125c eon eoff eoff er 0 5 10 15 20 0246810121416 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 200a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 0 100 200 300 400 500 600 v ce (v) i c (a) v ge =15v t j =125c r g =1.5 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.04 0.08 0.12 0.16 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGF150X60TE3G APTGF150X60TE3G ? rev 2 april, 2006 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c 0 50 100 150 200 250 300 0 0.25 0.5 0.75 1 1.25 1.5 v f (v) i f (a) hard switching zcs zv s 0 10 20 30 40 50 60 70 0 50 100 150 200 250 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =1.5 ? t j =125c t c =75c operatin g frequenc y vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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